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An important consideration in miniaturizing transistors is maximizing thecoupling between the gate and the semiconductor channel. A nanowire with acoaxial metal gate provides optimal gate-channel coupling, but has only beenrealized for vertically oriented nanowire transistors. We report a method forproducing laterally oriented wrap-gated nanowire field-effect transistors thatprovides exquisite control over the gate length via a single wet etch step,eliminating the need for additional lithography beyond that required to definethe source/drain contacts and gate lead. It allows the contacts and nanowiresegments extending beyond the wrap-gate to be controlled independently bybiasing the doped substrate, significantly improving the sub-thresholdelectrical characteristics. Our devices provide stronger, more symmetric gatingof the nanowire, operate at temperatures between 300 to 4 Kelvin, and offer newopportunities in applications ranging from studies of one-dimensional quantumtransport through to chemical and biological sensing.

Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography