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Electronic transport experiments involving the topologically protected statesfound at the surface of Bi2Se3 and other topological insulators require finecontrol over carrier density, which is challenging with existing bulk-dopedmaterial. Here we report on electronic transport measurements on thin (<100 nm)Bi2Se3 devices and show that the density of the surface states can be modulatedvia the electric field effect by using a top-gate with a high-k dielectricinsulator. The conductance dependence on geometry, gate voltage, andtemperature all indicate that transport is governed by parallel surface andbulk contributions. Moreover, the conductance dependence on top-gate voltage isambipolar, consistent with tuning between electrons and hole carriers at thesurface.

Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices