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The mobility of p-type nanowires (NWs) of diameters of D=12nm down to D=3nm,in [100], [110], and [111] transport orientations is calculated. An atomistictight-binding model is used to calculate the NW electronic structure.Linearized Boltzmann transport theory is applied, including phonon and surfaceroughness scattering (SRS) mechanisms, for the mobility calculation. We findthat large mobility enhancements (of the order of 4X) can be achieved as thediameter of the [110] and even more that of the [111] NWs scales down to D=3nm.This enhancement originates from the increase in the dispersion curvatures andconsequently the hole velocities as the diameter is scaled. This benefit overcompensates the mobility reduction caused by SRS as the diameter reduces. Themobility of the [100] NWs, on the other hand, is the lowest compared the othertwo NW orientations, and additionally suffers as the diameter scales. Thebandstructure engineering techniques we describe are a generic feature ofanisotropic bulk bands, and can be also applied to 2D thin-body-layers as wellas other channel materials.

Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: An atomistic analysis