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We show that graphene deposited on a substrate has a non-negligible densityof atomic scale defects. This is evidenced by a previously unnoticed D peak inthe Raman spectra with intensity of about 1% with respect to the G peak. Weevaluated the effect of such impurities on electron transport by mimicking themwith hydrogen adsorbates and measuring the induced changes in both mobility andRaman intensity. If the intervalley scatterers responsible for the D peak aremonovalent, their concentration is sufficient to account for the limitedmobilities achievable in graphene on a substrate.

On resonant scatterers as a factor limiting carrier mobility in graphene