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We address recent experiments (Science 325, 1367 (2009)) reporting on highlyefficient multiplication of electron-hole pairs in carbon nanotube photodiodesat photon energies near the carrier multiplication threshold (twice thequasi-particle band gap). This result is surprising in light of recentexperimental and theoretical work on multiexciton generation in other confinedmaterials, such as semiconducting nanocrystals. We propose a detailed mechanismbased on carrier dynamics and impact excitation resulting in highly efficientmultiplication of electron-hole pairs. We discuss the important time and energyscales of the problem and provide analysis of the role of temperature and thelength of the diode.

Can impact excitation explain efficient carrier multiplication in carbon nanotube photodiodes?