English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A simple surface band structure and a large bulk band gap have allowed Bi2Se3to become a reference material for the newly discovered three-dimensionaltopological insulators, which exhibit topologically-protected conductingsurface states that reside inside the bulk band gap. Studying topologicalinsulators such as Bi2Se3 in nanostructures is advantageous because of the highsurface-to-volume ratio, which enhances effects from the surface states;recently reported Aharonov-Bohm oscillation in topological insulatornanoribbons by some of us is a good example. Theoretically, introducingmagnetic impurities in topological insulators is predicted to open a small gapin the surface states by breaking time-reversal symmetry. Here, we presentsynthesis of magnetically-doped Bi2Se3 nanoribbons by vapor-liquid-solid growthusing magnetic metal thin films as catalysts. Although the doping concentrationis less than ~ 2%, low-temperature transport measurements of the Fe-dopedBi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K,confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. Thecapability to dope topological insulator nanostructures magnetically opens upexciting opportunities for spintronics.

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons