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Optical emission from carbon nanotube transistors (CNTFETs) has recentlyattracted significant attention due to its potential applications. In thispaper, we use a self-consistent numerical solution of the Boltzmann transportequation in the presence of both phonon and exciton scattering to present adetailed study of the operation of a partially suspended CNTFET light emitter,which has been discussed in a recent experiment. We determine the energydistribution of hot carriers in the CNTFET, and, as reported in the experiment,observe localized generation of excitons near the trench-substrate junction andan exponential increase in emission intensity with a linear increase in currentversus gate voltage. We further provide detailed insight into device operation,and propose optimization schemes for efficient exciton generation; a deepertrench increases the generation efficiency, and use of high-k substrate oxidescould lead to even larger enhancements.

Computational study of exciton generation in suspended carbon nanotube transistors