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Optical control of the lateral quantum confinement and number of electronsconfined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illuminationwith a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuningof energy-level structure and electron population is demonstrated by monitoringthe low-lying transitions of the electrons from the lowest quantum-dot energyshells by resonant inelastic light scattering. These findings open the way tothe manipulation of single electrons in these quantum dots without the need ofexternal metallic gates.

Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots