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Utilizing sp3d5s* tight-binding band structure and wave functions forelectrons and holes we show that acoustic phonon limited hole mobility in [110]grown silicon nanowires (SiNWs) is greater than electron mobility. The roomtemperature acoustically limited hole mobility for the SiNWs considered can beas high as 2500 cm2/Vs, which is nearly three times larger than the bulkacoustically limited silicon hole mobility. It is also shown that the electronand hole mobility for [110] grown SiNWs exceed that of similar diameter [100]SiNWs, with nearly two orders of magnitude difference for hole mobility. Sincesmall diameter SiNWs have been seen to grow primarily along [110] direction,results strongly suggest that these SiNWs may be useful in future electronics.Our results are also relevant to recent experiments measuring SiNW mobility.

Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon