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We demonstrate a spin diode consisting of a semiconductor free nano-scaleFe/MgO-based double tunnel junction. The device exhibits a near perfectspin-valve effect combined with a strong diode effect. The mechanism consistentwith our data is resonant tunneling through discrete states in the middleferromagnetic layer sandwiched by tunnel barriers of different spin-dependenttransparency. The observed magneto-resistance is record high, ~4000%,essentially making the structure an on/off spin-switch. This, combined with thestrong diode effect, ~100, offers a new device that should be promising forsuch technologies as magnetic random access memory and re-programmable logic.

Spin Diode Based on Fe/MgO Double Tunnel Junction