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We use scanning photocurrent microscopy (SPCM) to investigate the propertiesof internal p-n junctions as well as local defects in ambipolar carbon nanotube(CNT) transistors. Our SPCM images show strong signals near metal contactswhose polarity and positions change depending on the gate bias. SPCM imagesanalyzed in conjunction with the overall conductance also indicate theexistence and gate-dependent evolution of internal p-n junctions near contactsin the n-type operation regime. To determine the p-n junction position and thedepletion width with a nanometer scale resolution, a Gaussian fit was used. Wealso measure the electric potential profile of CNT devices at different gatebiases, which shows that both local defects and induced electric fields can beimaged using the SPCM technique. Our experiment clearly demonstrates that SPCMis a valuable tool for imaging and optimizing electrical and optoelectronicproperties of CNT based devices.

Photocurrent Imaging of p-n Junctions and Local Defects in Ambipolar Carbon Nanotube Transistors