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GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates bymolecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAsphase separation. Their density is proportional to the density of catalyzingMnAs nanoislands, which can be controlled by the Mn flux and/or the substratetemperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, thenanowires combine one-dimensional properties with the magnetic properties of(Ga,Mn)As and provide natural, self assembled structures for nanospintronics.

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions