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We investigate the effect of quantum confinement on the electronic structure of diluted magnetic semiconductor Ga1-xMnxAs using a combination of tight-binding and density functional methods. We observe half metallic behavior in the clusters as well as a strong majority-spin Mn d-As p hybridization down to sizes as small as 20 Angstrom in diameter. Below this size, the doped holes are significantly self-trapped by the Mn sites, signaling both valence and electronic transitions. Our results imply that magnetically doped III-V nanoparticles will provide a medium for manipulating the electronic structure of dilute magnetic semiconductors while conserving the magnetic properties and even enhancing them in certain size regimes

Influence of Quantum Confinement on the Electronic and Magnetic Properties of (Ga,Mn)As Diluted Magnetic Semiconductor