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We report nanosecond time-resolved photoluminescence measurements on theisoelectronic series of oxygen deficient centers in amorphous silica,Si-ODC(II), Ge-ODC(II) and Sn-ODC(II) which are responsible of fluorescenceactivities at $\sim$4 eV under excitation at $\sim$5 eV. The dependence of thefirst moment of their emission band on time, and that of the radiative decaylifetime on emission energy are analyzed within a theoretical model able todescribe the effects introduced by disorder on the optical properties of thedefects. We obtain separate estimates of the homogeneous and inhomogeneouscontributions to the measured emission linewidth and we derive homogeneousspectroscopic features of the investigated point defects (Huangh-Rhys factor,homogeneous width, oscillator strength, vibrational frequency). The resultspoint to a picture in which an oxygen deficient center localized on a heavieratom features a higher degree of inhomogeneity due to stronger local distortionof the surrounding matrix. For Si, Ge, Sn related defects the parameter$\lambda$, able to quantify inhomogeneity, results to be 65, 78 and 90$%,respectively.

Isoelectronic series of oxygen deficient centers in silica: experimental estimation of homogeneous and inhomogeneous spectral widths