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Pentacenequinone (PnQ) impurities have been introduced into a pentacenesource material at number densities from 0.001 to 0.474 to quantify therelative effects of impurity content and grain boundary structure on transportin pentacene thin-film transistors. Atomic force microscopy (AFM) andelectrical measurements of top-contact pentacene thin-film transistors havebeen employed to directly correlate initial structure and final filmstructures, with the device mobility as a function of added impurity content.The results reveal a factor four decrease in mobility without significantchanges in film morphology for source PnQ number fractions below ~0.008. Forthese low concentrations, the impurity thus directly influences transport,either as homogeneously distributed defects or by concentration at theotherwise-unchanged grain boundaries. For larger impurity concentrations, thecontinuing strong decrease in mobility is correlated with decreasing grainsize, indicating an impurity-induced increase in the nucleation of grainsduring early stages of film growth.

Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors