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We report resistivity, thermoelectric power and thermal conductivity of MoS2single crystals prepared by chemical vapour transport (CVT) method using I2,Br2 and TeCl4 as transport agents. The material presents low-lying donor andacceptor levels, which dominate the in-plane charge transport. Intercalatesinto the Van der Waals gap strongly influence the inter-plane resistivity.Thermoelectric power displays the characteristics of strong electron-phononinteraction. Detailed theoretical model of thermal conductivity reveals thepresence of high number of defects in the MoS2 structure. We show that thesedefects are inherent to CVT growth method, coming mostly from the transportagent molecules inclusion as identified by Total Reflection X-ray Fluorescenceanalysis (TXRF) and in-beam activation analysis (IBAA).

The Role of Transport Agents in MoS2 Single Crystals