English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Doping of III-nitride based compound semiconductor nanowires is still achallenging issue to have a control over the dopant distribution in preciselocations of the nanowire optoelectronic devices. Knowledge of the dopantincorporation and its pathways in nanowires for such devices is limited by thegrowth methods. We report the direct evidence of incorporation pathway for Mgdopants in p-type nonpolar GaN nanowires grown via vapour-liquid-solid (VLS)method in a chemical vapour deposition technique for the first time. Mgincorporation is confirmed using X-ray photoelectron (XPS) and electron energyloss spectroscopic (EELS) measurements. Energy filtered transmission electronmicroscopic (EFTEM) studies are used for finding the Mg incorporation pathwayin the GaN nanowire. Photoluminescence studies on Mg doped GaN nanowires alongwith the electrical characterization on heterojunction formed between nanowiresand n-Si confirm the activation of Mg atoms as p-type dopants in nonpolar GaNnanowires.

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires