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Understanding the influence that copper substrate surface symmetry and oxygenimpurities have on the growth of graphene by chemical vapor deposition isimportant for developing techniques for producing high quality graphene.Therefore, we have studied the growth of graphene by catalytic decomposition ofethylene in an ultra-high vacuum chamber on both a clean Cu(100) surface and aCu(100) surface pre-dosed with a layer of chemisorbed oxygen. The crystalstructure of the graphene films was characterized with \emph{in-situ} lowenergy electron diffraction. By heating the clean Cu(100) substrate from roomtemperature to the growth temperature in ethylene, epitaxial graphene filmswere formed. The crystal quality was found to depend strongly on the growthtemperature. At 900 $^\circ$C, well-ordered two-domain graphene films wereformed. Pre-dosing the Cu(100) surface with a chemisorbed layer of oxygenbefore graphene growth was found to adversely affect the crystal quality of thegraphene overlayer by inducing a much higher degree of rotational disorder ofthe graphene grains with respect to the Cu(100) substrate. The growthmorphology of the graphene islands during the initial stages of nucleation wasmonitored with \emph{ex-situ} scanning electron microscopy. The nucleation rateof the graphene islands was observed to drop by an order of magnitude bypre-dosing the Cu(100) surface with a chemisorbed oxygen layer before growth.This reduction in nucleation rate results in the formation of much largergraphene islands. Therefore, the presence of oxygen during graphene growthaffects both the relative orientation and average size of grains within thefilms grown on Cu(100) substrates.

Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition