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We report on the temperature dependence of in-plane E2g and out of plane A1gRaman modes in high quality few layers MoS2 (FLMS) prepared using a hightemperature vapor-phase method. The materials obtained were investigated usingtransmission electron microscopy. The frequencies of these two phonon modeswere found to vary linearly with temperature. The first order temperaturecoefficients for E2g and A1g modes were found to be 1.32*10-2 and 1.23*10-2cm-1/K, respectively. The thermal conductivity of the suspended FLMS at roomtemperature was estimated to be about 52 W/mK.

Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2