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The dynamics and internal structure of doping fronts in organicsemiconductors are investigated theoretically using an extended drift-diffusionmodel for ions, electrons and holes. The model also involves the injectionbarriers for electrons and holes in the partially doped regions in the form ofthe Nernst equation, together with a strong dependence of the electron and holemobility on concentrations. Closed expressions for the front velocities and theion concentrations in the doped regions are obtained. The analytical theory isemployed to describe the acceleration of the p- and n-fronts towards eachother. The analytical results show very good agreement with the experimentaldata. Furthermore, it is shown that the internal structure of the doping frontsis determined by the diffusion and mobility processes. The asymptotic behaviorof the concentrations and the electric field is studied analytically inside thedoping fronts. The numerical solution for the front structure confirms the mostimportant predictions of the analytical theory: a sharp head of the front inthe undoped region, a smooth relaxation tail in the doped region, and a plateauat the critical point of transition from doped to undoped regions.

A model for the dynamics and internal structure of planar doping fronts in organic semiconductors