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We have produced ultrathin epitaxial graphite films which show remarkable 2Delectron gas (2DEG) behavior. The films, composed of typically 3 graphenesheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC,and characterized by surface-science techniques. The low-temperatureconductance spans a range of localization regimes according to the structuralstate (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positivemagnetoconductance). Low resistance samples show characteristics ofweak-localization in two dimensions, from which we estimate elastic andinelastic mean free paths. At low field, the Hall resistance is linear up to4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2}per graphene sheet. The most highly-ordered sample exhibits Shubnikov - de Haasoscillations which correspond to nonlinearities observed in the Hallresistance, indicating a potential new quantum Hall system. We show that thehigh-mobility films can be patterned via conventional lithographic techniques,and we demonstrate modulation of the film conductance using a top-gateelectrode. These key elements suggest electronic device applications based onnano-patterned epitaxial graphene (NPEG), with the potential for large-scaleintegration.Comment: 5 pages, figure files: figure1.eps, figure2a.eps, figure2b.eps,  figure3.ep

Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics