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Two-dimensional materials have significant potential for the development ofnew devices. Here we report the electronic and structural properties of$\beta$-GeSe, a previously unreported polymorph of GeSe, with a unique crystalstructure that displays strong two-dimensional structural features.$\beta$-GeSe is made at high pressure and temperature and is stable underambient conditions. We compare it to its structural and electronic relatives$\alpha$-GeSe and black phosphorus. The $\beta$ form of GeSe displays a boatconformation for its Ge-Se six-ring, while the previously known $\alpha$ form,and black phosphorus, display the more common chair conformation for theirsix-rings. Electronic structure calculations indicate that $\beta$-GeSe is asemiconductor, with an approximate bulk band gap of $\Delta~\approx$ 0.5 eV,and, in its monolayer form, $\Delta~\approx$ 0.9 eV. These values fall betweenthose of $\alpha$-GeSe and black phosphorus, making $\beta$-GeSe a promisingcandidate for future applications. The resistivity of our $\beta$-GeSe crystalsmeasured in-plane is on the order of $\rho \approx$ 1 $\Omega$cm, while beingessentially temperature independent.

High-Pressure Synthesis and Characterization of $\beta$-GeSe - A Semiconductor with Six-Rings in an Uncommon Boat Conformation