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Vertical and lateral heterogeneous structures of two-dimensional (2D)materials have paved the way for pioneering studies on the physics andapplications of 2D materials. A hybridized hexagonal boron nitride (h-BN) andgraphene lateral structure, a heterogeneous 2D structure, has been fabricatedon single-crystal metals or metal foils by chemical vapor deposition (CVD).However, once fabricated on metals, the h-BN/graphene lateral structuresrequire an additional transfer process for device applications, as reported forCVD graphene grown on metal foils. Here, we demonstrate that a single-crystalh-BN/graphene lateral structure can be epitaxially grown on a wide-gapsemiconductor, SiC(0001). First, a single-crystal h-BN layer with the sameorientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 oCusing borazine molecules. Second, when heated above 1150 oC in vacuum, the h-BNlayer was partially removed and, subsequently, replaced with graphene domains.Interestingly, these graphene domains possess the same orientation as the h-BNlayer, resulting in a single-crystal h-BN/graphene lateral structure on a wholesample area. For temperatures above 1600 oC, the single-crystal h-BN layer wascompletely replaced by the single-crystal graphene layer. The crystallinestructure, electronic band structure, and atomic structure of the h-BN/graphenelateral structure were studied by using low energy electron diffraction,angle-resolved photoemission spectroscopy, and scanning tunneling microscopy,respectively. The h-BN/graphene lateral structure fabricated on a wide-gapsemiconductor substrate can be directly applied to devices without a furthertransfer process, as reported for epitaxial graphene on a SiC substrate.

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene layer on a Wide-Band Gap Semiconductor