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We have investigated the electron mobility on field-effect transistors basedon PDIF-CN$_{2}$ single crystals. The family of the small moleculesPDI8-CN$_{2}$ has been chosen for the promising results obtained forvapour-deposited thin film FETs. We used as gate dielectric a layer of PMMA(spinned on top of the SiO$_{2}$), to reduce the possibility of electrontrapping by hydroxyl groups present at surface of the oxide. For these deviceswe obtained a room temperature mobility of 6 cm$^{2}$/Vs in vacuum and 3cm$^{2}$/Vs in air. Our measurements demonstrate the possibility to obtainn-type OFETs with performances comparable to those of p-type devices.

High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors