English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We demonstrate high-quality epitaxial germanium (Ge) films on a metallicsilicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beamepitaxy techniques, we can obtain an artificially controlled arrangement ofsilicon (Si) or iron (Fe) atoms at the surface on Fe3Si(111). The Si-terminatedFe3Si(111) surface enables us to grow two-dimensional epitaxial Ge films,whereas the Fe-terminated one causes the three-dimensional epitaxial growth ofGe films. The high-quality Ge grown on the Si-terminated surface has almost nostrain, meaning that the Ge films are not grown on the low-temperature-grown Sibuffer layer but on the lattice matched metallic Fe3Si. This study will open anew way for vertical-type Ge-channel transistors with metallic source/draincontacts.

Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide