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The electric-field-modulated resistance switching in VO2 thin films grown onpiezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates hasbeen investigated. Large relative change in resistance (10.7%) was observed inVO2/PMN-PT(111) hererostructures at room temperature. For a substrate with agiven polarization direction, stable resistive states of VO2 films can berealized even when the applied electric fields are removed from theheterostructures. By sweeping electric fields across the heterostructureappropriately, multiple resistive states can be achieved. These stableresistive states result from the different stable remnant strain states ofsubstrate, which is related to the rearrangements of ferroelectric domainstructures in PMN-PT(111) substrate. The resistance switching tuned by electricfield in our work may have potential applications for novel electronic devices.

Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures