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Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated intoamorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:Hphotodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) ontop of large-scale synthesized and transferred homogeneous FL-MoS$_2$. Thisnovel detector array exhibits long-term stability (more than six month) andoutperforms conventional silicon-based pin photodetectors in the infrared range(IR, $\lambda$ = 2120 nm) in terms of sensitivities by up to 50 mAW$^{-1}$.Photodetectivities of up to 2 x 10$^{10}$ Jones and external quantumefficiencies of 3 % are achieved. The detectors further feature the additionalfunctionality of bias-dependent responsivity switching between the differentspectral ranges. The realization of such scalable detector arrays is anessential step towards pixelated and wavelength-selective sensors operating inthe IR spectral range.

Few-Layer MoS$_2$/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection