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Color centers in solid state crystals have become a frequently used systemfor single photon generation, advancing the development of integrated photonicdevices for quantum optics and quantum communication applications. Inparticular, defects hosted by two-dimensional (2D) hexagonal boron nitride(hBN) are a promising candidate for next-generation single photon sources, dueto its chemical and thermal robustness and high brightness at room temperature.The 2D crystal lattice of hBN allows for a high extraction efficiency and easyintegration into photonic circuits. Here we develop plasma etching techniqueswith subsequent high temperature annealing to reliably create defects. We showhow different fabrication parameters influence the defect formation probabilityand the emitter brightness. A full optical characterization reveals the higherquality of the created quantum emitters, represented by a narrow spectrum,short excited state lifetime and high single photon purity. We alsoinvestigated the photostability on short and very long timescales. We utilize awet chemically-assisted transfer process to reliably transfer the single photonsources onto arbitrary substrates, demonstrating the feasibility for theintegration into scalable photonic quantum information processing networks.

Fabrication and deterministic transfer of high quality quantum emitter in hexagonal boron nitride