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Large-scale optoelectronics integration is strongly limited by the lack ofefficient light sources, which could be integrated with the siliconcomplementary metal-oxide-semiconductor (CMOS) technology. Persistent effortscontinue to achieve efficient light emission from silicon in the extending thesilicon technology into fully integrated optoelectronic circuits. Here, wereport the realization of room-temperature stimulated emission in thetechnologically crucial 1.5 micron wavelength range from Er-doped GaNmultiple-quantum wells on silicon and sapphire. Employing the well-acknowledgedvariable stripe technique, we have demonstrated an optical gain up to 170 cm-1in the multiple-quantum well structures. The observation of the stimulatedemission is accompanied by the characteristic threshold behavior of emissionintensity as a function of pump fluence, spectral linewidth narrowing andexcitation length. The demonstration of room-temperature lasing at the minimumloss window of optical fibers and in the eye-safe wavelength region of 1.5micron are highly sought-after for use in many applications including defense,industrial processing, communication, medicine, spectroscopy and imaging. Asthe synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has beensuccessfully demonstrated, the results laid the foundation for achieving hybridGaN-Si lasers providing a new pathway towards full photonic integration forsilicon optoelectronics.

Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region