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The fabrication of luminescent defects in single-crystal diamond upon Snimplantation and annealing is reported. The relevant spectral features of theoptical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm)are attributed to Sn-related defects through the correlation of theirphotoluminescence (PL) intensity with the implantation fluence. SingleSn-related defects were identified and characterized through the acquisition oftheir second-order auto-correlation emission functions, by means ofHanbury-Brown-Twiss interferometry. The investigation of their single-photonemission regime as a function of excitation laser power revealed thatSn-related defects are based on three-level systems with a 6 ns radiative decaylifetime. In a fraction of the studied centers, the observation of a blinkingPL emission is indicative of the existence of a dark state. Furthermore,absorption dependence from the polarization of the excitation radiation withabout 45 percent contrast was measured. This work shed light on the existenceof a new optical center associated with a group-IV impurity in diamond, withsimilar photo-physical properties to the already well-known Si-V and Ge-Vemitters, thus providing results of interest from both the fundamental andapplicative points of view.

Single-photon-emitting optical centers in diamond fabricated upon Sn implantation