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Graphene/silicon (G/Si) heterojunction based devices have been demonstratedas high responsivity photodetectors that are potentially compatible withsemiconductor technology. Such G/Si Schottky junction diodes are typically inparallel with gated G/silicon dioxide (SiO$_2$)/Si areas, where the graphene iscontacted. Here, we utilize scanning photocurrent measurements to investigatethe spatial distribution and explain the physical origin of photocurrentgeneration in these devices. We observe distinctly higher photocurrentsunderneath the isolating region of graphene on SiO$_2$ adjacent to the Schottkyjunction of G/Si. A certain threshold voltage (V$_T$) is required before thiscan be observed, and its origins are similar to that of the threshold voltagein metal oxide semiconductor field effect transistors. A physical model servesto explain the large photocurrents underneath SiO$_2$ by the formation of aninversion layer in Si. Our findings contribute to a basic understanding ofgraphene / semiconductor hybrid devices which, in turn, can help in designingefficient optoelectronic devices and systems based on such 2D/3Dheterojunctions.

High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes