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Precise generation of spin defects in solid-state systems is essential fornanostructure fluorescence enhancement. We investigated a method for creatingsingle silicon vacancy defect arrays in silicon carbide using a helium-ionmicroscope. Maskless and targeted generation can be realized by preciselycontrolling the focused He+ ion beam with an implantation uncertainty of 60 nm.The generated silicon vacancies were identified by measuring the opticallydetected magnetic resonance spectrum and room temperature photoluminescencespectrum. We systematically studied the effects of the implantation ion dose onthe generated silicon vacancies. After optimization, a conversion yield of ~6.95 % and a generation rate for a single silicon vacancy of ~ 35 % wererealized. This work paves the way for the integration and engineering of colorcenters to photonic structures and the application of quantum sensing based onspin defects in silicon carbide.

Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam