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Graphene holds a great promise for a number of diverse future applications,in particular related to its easily tunable doping and Fermi level byelectrostatic gating. However, as of today, most implementations rely onelectrical doping via the application of continuous large voltages to maintainthe desired doping. We show here how graphene can be implemented withconventional semiconductor flash memory technology in order to makeprogrammable doping possible, simply by the application of short gate pulses.We also demonstrate how this approach can be used for a memory device, and alsoshow potential neuromorphic capabilities of the device. Finally, we show thatthe overall performance can be significantly enhanced by illuminating thedevice with UV radiation. Our approach may pave the way for integratinggraphene in CMOS technology memory applications, and our device design couldalso be suitable for large scale neuromorphic computing structures.

Photo memtransistor based on CMOS flash memory technology on Graphene with neuromorphic applications