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We report on pulsed-laser induced generation of nitrogen-vacancy (NV) centersin diamond facilitated by a solid-immersion lens (SIL). The SIL enables laserwriting at energies as low as 5.8 nJ per pulse and allows vacancies to beformed close to a diamond surface without inducing surface graphitization. Weoperate in the previously unexplored regime where lattice vacancies are createdfollowing tunneling breakdown rather than multiphoton ionization. We presentthree samples in which NV-center arrays were laser-written at distances between~1 $\mu$m and 40 $\mu$m from a diamond surface, all presenting narrowdistributions of optical linewidths with means between 62.1 MHz and 74.5 MHz.The linewidths include the effect of long-term spectral diffusion induced by a532 nm repump laser for charge-state stabilization, thereby emphasizing theparticularly low charge-noise environment of the created color centers. Suchhigh-quality NV centers are excellent candidates for practical applicationsemploying two-photon quantum interference with separate NV centers. Finally, wepropose a model for disentangling power broadening from inhomogeneousbroadening in the NV center optical linewidth.

Low charge-noise nitrogen-vacancy centers in diamond created using laser writing with a solid-immersion lens