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Atomically thin two-dimensional semiconducting transition metaldichalcogenides (TMDs) can withstand large levels of strain before theirirreversible damage occurs. This unique property offers a promising route forcontrol of the optical and electronic properties of TMDs, for instance bydepositing them on nano-structured surfaces, where position-dependent straincan be produced on the nano-scale. Here, we demonstrate strain-inducedmodifications of the optical properties of mono- and bilayer TMD WSe$_2 $placed on photonic nano-antennas made from gallium phosphide (GaP).Photoluminescence (PL) from the strained areas of the TMD layer is enhancedowing to the efficient coupling with the confined optical mode of thenano-antenna. Thus, by following the shift of the PL peak, we deduce thechanges in the strain in WSe$_2$ deposited on the nano-antennas of differentradii. In agreement with the presented theory, strain up to $\approx 1.4 \%$ isobserved for WSe$_2$ monolayers. We also estimate that $>3\%$ strain isachieved in bilayers, accompanied with the emergence of a direct bandgap inthis normally indirect-bandgap semiconductor. At cryogenic temperatures, wefind evidence of the exciton confinement in the most strained nano-scale partsof the WSe$_2$ layers, as also predicted by our theoretical model. Our results,of direct relevance for both dielectric and plasmonic nano-antennas, show thatstrain in atomically thin semiconductors can be used as an additional parameterfor engineering light-matter interaction in nano-photonic devices.

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors