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Chemical vapor deposition (CVD) is a powerful method employed for highquality monolayer crystal growth of 2D transition metal dichalcogenides withmuch effort invested toward improving the growth process. Here, we report anovel method for CVD based growth of monolayer molybdenum disulfide (MoS2) byusing thermally evaporated thin films of molybdenum trioxide (MoO3) as themolybdenum (Mo) source for co-evaporation. Uniform evaporation rate of the MoO3thin films provides uniform Mo vapor which promotes highly reproducible singlecrystal growth of MoS2 throughout the substrate. These high-quality crystalsare as large as 95 um and were characterized by scanning electron microscopy,Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy andtransmission electron microscopy. The bottom gated field effect transistorsfabricated using the as grown single crystals show n-type transistor behaviorwith a good on/off ratio of 10^6 under ambient condition. Our results presentedhere addresses the precursor vapor control during the CVD process and is amajor step forward toward reproducible growth of MoS2 for future semiconductordevice applications.

Uniform vapor pressure based CVD growth of MoS2 using MoO3 thin film as a precursor for co-evaporation