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Measurement of zeta potential of Ga and N-face gallium nitride has beencarried out as function of pH. Both the faces show negative zeta potential inthe pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-faceshows higher negative zeta potential due to larger concentration of adsorbedoxygen. Zeta potential data clearly showed that H-terminated diamond seedsolution at pH 8 will be optimal for the self assembly of a monolayer ofdiamond nanoparticles on the GaN surface. Subsequent growth of thin diamondfilms on GaN seeded with H-terminated diamond seeds produced fully coalescedfilms confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. Thistechnique removes the requirement for a low thermal conduction seeding layerlike silicon nitride on GaN.

Surface zeta potential and diamond seeding on gallium nitride films