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Two-dimensional (2D) materials with narrow band gaps (∼0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detections. However, most of the 2D materials studied to date have band gaps that are too large. A few of the materials with suitable band gaps are not stable under ambient conditions. In this study, the layered Nb 2 SiTe 4 is shown to be a stable 2D material with a band gap of 0.39 eV. Field-effect transistors based on few-layer Nb 2 SiTe 4 show ambipolar transport with a similar magnitude of electron and hole current and a high charge-carrier mobility of ∼100 cm 2 V -1 s -1 at room temperature. Optoelectronic measurements of the devices show clear response to an MIR wavelength of 3.1 μm with a high responsivity of ∼0.66 AW -1 . These results establish Nb 2 SiTe 4 as a good candidate for ambipolar devices and MIR detection.

Nb2SiTe4: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response

Nb₂SiTe₄: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response