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We demonstrate the first \textit{all-metallic} mesoscopicsuperconductor-normal metal-superconductor (SNS) field-effect controlledJosephson transistors (SNS-FETs) and show their full characterization from thecritical temperature $T_c$ down to 50 mK in the presence of both electric andmagnetic field. The ability of a static electric field -applied by mean of alateral gate electrode- to suppress the critical current $I_s$ in aproximity-induced superconductor is proven for both positive and negative gatevoltage values. $I_s$ suppression reached typically about one third of itsinitial value, saturating at high gate voltages. The transconductance of ourSNS-FETs obtains values as high as 100 nA/V at 100 mK. On the fundamentalphysics side, our results suggest that the mechanism at the basis of theobserved phenomenon is quite general and does not rely on the existence of atrue pairing potential, but rather the presence of superconducting correlationsis enough for the effect to occur. On the technological side, our findingswiden the family of materials available for the implementation of all-metallicfield-effect transistors to \textit{synthetic} proximity-inducedsuperconductors.

Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions