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In search of an improved strategy to form low resistance contacts to MoS2 andrelated semiconducting transition metal dichalcogenides, we use ab initiodensity functional electronic structure calculations in order to determine theequilibrium geometry and electronic structure of MoO3/MoS2 and MoO2/MoS2bilayers. Our results indicate that, besides a rigid band shift associated withcharge transfer, the presence of molybdenum oxide modifies the electronicstructure of MoS2 very little. We find that the charge transfer in the bilayerprovides a sufficient degree of hole doping to MoS2, resulting in a highlytransparent contact region.

Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors