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Selenium has attracted intensive attention as a promising material candidatefor future optoelectronic applications. However, selenium has a strong tendencyto grow into nanowire forms due to its anisotropic atomic structure, which haslargely hindered the exploration of its potential applications. In this work,using a physical vapor deposition method, we have demonstrated the synthesis oflarge-size, high-quality 2D selenium nanosheets, the minimum thickness of whichcould be as thin as 5 nm. The Se nanosheet exhibits a strong in-planeanisotropic property, which is determined by angle-resolved Raman spectroscopy.Back-gating field-effect transistors based on a Se nanosheet exhibit p-typetransport behaviors with on-state current density around 20 mA/mm at Vds = 3 V.Four-terminal field effect devices are also fabricated to evaluate theintrinsic hole mobility of the selenium nanosheet, and the value is determinedto be 0.26 cm2 Vs at 300 K. The selenium nanosheet phototransistors show anexcellent photoresponsivity of up to 263 A/W, with a rise time of 0.1 s andfall time of 0.12 s. These results suggest that crystal selenium as a 2D formof a 1D van der Waals solid opens up the possibility to explore deviceapplications.

Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications