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We report the mechanically induced formation of a silicon-hydrogen covalentbond and its application in engineering nanoelectronic devices. We show thatusing the tip of a non-contact atomic force microscope (NC-AFM), a singlehydrogen atom could be vertically manipulated. When applying a localizedelectronic excitation, a single hydrogen atom is desorbed from the hydrogenpassivated surface and can be transferred to the tip apex as evidenced from aunique signature in frequency shift curves. In the absence of tunnel electronsand electric field in the scanning probe microscope junction at 0 V, thehydrogen atom at the tip apex is brought very close to a silicon dangling bond,inducing the mechanical formation of a silicon-hydrogen covalent bond and thepassivation of the dangling bond. The functionalized tip was used tocharacterize silicon dangling bonds on the hydrogen-silicon surface, was shownto enhance the scanning tunneling microscope (STM) contrast, and allowed NC-AFMimaging with atomic and chemical bond contrasts. Through examples, we show theimportance of this atomic scale mechanical manipulation technique in theengineering of the emerging technology of on-surface dangling bond basednanoelectronic devices.

Atomic White-Out: Enabling Atomic Circuitry Through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface