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Electrolyte gating is widely used to induce large carrier density modulationon solid surfaces to explore various properties. Most of past works haveattributed the charge modulation to electrostatic field effect. However, somerecent reports have argued that the electrolyte gating effect in VO2, TiO2 andSrTiO3 originated from field-induced oxygen vacancy formation. This gives riseto a controversy about the gating mechanism, and it is therefore vital toreveal the relationship between the role of electrolyte gating and theintrinsic properties of materials. Here, we report entirely differentmechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-{\delta}(NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show thatfield-induced oxygen vacancy formation in CuO chains of NBCO plays the dominantrole while it is mainly an electrostatic field effect in the case of PCCO. Thepossible reason is that NBCO has mobile oxygen in CuO chains while PCCO doesnot. Our study helps clarify the controversy relating to the mechanism ofelectrolyte gating, leading to a better understanding of the role of oxygenelectro migration which is very material specific.

The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics