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Ionic liquid gating has a number of advantages over solid-state gating,especially for flexible or transparent devices and for applications requiringhigh carrier densities. However, the large number of charged ions near thechannel inevitably results in Coulomb scattering, which limits the carriermobility in otherwise clean systems. We develop a model for this Coulombscattering. We validate our model experimentally using ionic liquid gating ofgraphene across varying thicknesses of hexagonal boron nitride, demonstratingthat disorder in the bulk ionic liquid often dominates the scattering.

Disorder From the Bulk Ionic Liquid in Electric Double Layer Transistors