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Layered two-dimensional (2D) materials display great potential for a range ofapplications, particularly in electronics. We report the large-scale synthesisof thin films of platinum diselenide (PtSe2), a thus far scarcely investigatedtransition metal dichalcogenide. Importantly, the synthesis by thermal assistedconversion is performed at 400 {\deg}C, representing a breakthrough for thedirect integration of this novel material with silicon (Si) technology. Besidesthe thorough characterization of this new 2D material, we demonstrate itspromise for applications in high-performance gas sensing with extremely shortresponse and recovery times observed due to the 2D nature of the films.Furthermore, we realized vertically-stacked heterostructures of PtSe2 on Siwhich act as both photodiodes and photovoltaic cells. Thus this studyestablishes PtSe2 as a potential candidate for next-generation sensors and(opto-)electronic devices, using fabrication protocols compatible withestablished Si technologies.

High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature