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Electric field effect in electronic double layer transistor (EDLT)configuration with ionic liquids as the dielectric materials is a powerfulmeans of exploring various properties in different materials. Here wedemonstrate the modulation of electrical transport properties and extremelyhigh mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO)interface through ionic liquid-assisted electric field effect. By changing thegate voltages, the depletion of charge carrier and the resultant enhancement ofelectron mobility up to 19380 cm$^2$/Vs are realized, leading to quantumoscillations of the conductivity at the LAO/STO interface. The present resultssuggest that high-mobility oxide interfaces which exhibit quantum phenomenacould be obtained by ionic liquid-assisted field effect.

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface