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Bilayer (BL) MoSe2 films grown by molecular-beam epitaxy (MBE) are studied byscanning tunneling microscopy and spectroscopy (STM/S). Similar to monolayer(ML) films, networks of inversion domain boundary (DB) defects are observedboth in the top and bottom layers of BL MoSe2, and often they are seenspatially correlated such that one is on top of the other. There are alsoisolated ones in the bottom layer without companion in the top-layer and aredetected by STM/S through quantum tunneling of the defect states through thebarrier of the MoSe2 ML. Comparing the DB states in BL MoSe2 with that of MLfilm reveals some common features as well as differences. Quantum confinementof the defect states is indicated. Point defects in BL MoSe2 are also observedby STM/S, where ionization of the donor defect by the tip-induced electricfield is evidenced. These results are of great fundamental interests as well aspractical relevance of devices made of MoSe2 ultrathin layers.

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy