English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report ambipolar transport properties in black phosphorus using anelectric-double-layer transistor (EDLT) configuration. The transfer curveclearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3.The band gap was determined as = 0.35 eV from the transfer curve, andHall-effect measurements revealed that the hole mobility was ~ 190 cm^2/Vs at170 K, which is one order of magnitude larger than the electron mobility. Byinducing an ultra-high carrier density of ~ 10^14 cm^-2, anelectric-field-induced transition from the insulating state to the metallicstate was realized, due to both electron and hole doping. Our results suggestthat black phosphorus will be a good candidate for the fabrication offunctional devices, such as lateral p-n junctions and tunnel diodes, due to theintrinsic narrow band gap.

Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating