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Interlayer excitons, or bound electron-hole pairs whose constituentquasiparticles are located in distinct stacked semiconducting layers, are beingintensively studied in heterobilayers of two dimensional semiconductors. Theyowe their existence to an intrinsic type-II band alignment between both layersthat convert these into p-n junctions. Here, we unveil a pronounced interlayerexciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe onepsilon-GaSe, whose pronounced emission is adjustable just by varying theirthicknesses given their number of layers dependent direct bandgaps.Time-dependent photoluminescense spectroscopy unveils considerably longerinterlayer exciton lifetimes with respect to intralayer ones, thus confirmingtheir nature. The linear Stark effect yields a bound electron-hole pair whoseseparation d is just (3.6 \pm 0.1) {\AA} with d being very close to dSe = 3.4{\AA} which is the calculated interfacial Se separation. The envelope of IX istwist angle dependent and describable by superimposed emissions that are nearlyequally spaced in energy, as if quantized due to localization induced by thesmall moir\'e periodicity. These heterostacks are characterized by extremelyflat interfacial valence bands making them prime candidates for the observationof magnetism or other correlated electronic phases upon carrier doping.

Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures