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Two-dimensional materials with tunable in-plane anisotropic infrared responsepromise versatile applications in polarized photodetectors and field-effecttransistors. Black phosphorus is a prominent example. However, it suffers frompoor ambient stability. Here, we report the strain-tunable anisotropic infraredresponse of a layered material Nb2SiTe4, whose lattice structure is similar tothe 2H-phase transition metal dichalcogenides (TMDCs) with three differentkinds of building units. Strikingly, some of the strain-tunable opticaltransitions are crystallographic axis-dependent, even showing opposite shiftwhen uniaxial strain is applied along two in-plane principal axes. Moreover,G0W0-BSE calculations show good agreement with the anisotropic extinctionspectra. The optical selection rules are obtained via group theory analysis,and the strain induced unusual shift trends are well explained by the orbitalcoupling analysis. Our comprehensive study suggests that Nb2SiTe4 is a goodcandidate for tunable polarization-sensitive optoelectronic devices.

Anisotropic Infrared Response and Orientation-dependent Strain-tuning of the Electronic Structure in Nb2SiTe4